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vs-st183sp series www.vishay.com vishay semiconductors revision: 11-mar-14 1 document number: 94369 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 inverter grade thyristors (stud version), 195 a features ? center amplifying gate ? high surge current capability ? low thermal impedance ? high speed performance ? compression bonding ? designed and qualified for industrial level ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 typical applications ?inverters ? choppers ? induction heating ? all types of force-commutated converters ? ? ? ? ? electrical specifications product summary i t(av) 195 a v drm /v rrm 400 v, 800 v v tm 1.80 v i tsm at 50 hz 4900 a i tsm at 60 hz 5130 a i gt 200 ma t j -40 c to 125 c package to-209ab (to-93) diode variation single scr to-209ab (to-93) major ratings and characteristics parameter test conditions values units i t(av) 195 a t c 85 c i t(rms) 306 a i tsm 50 hz 4900 60 hz 5130 i 2 t 50 hz 120 ka 2 s 60 hz 110 v drm /v rrm 400 to 800 v t q 15 to 20 s t j -40 to 125 c voltage ratings type number voltage code v drm /v rrm , maximum repetitive peak voltage v v rsm , maximum non-repetitive peak voltage v i drm /i rrm maximum at t j = t j maximum ma vs-st183s 04 400 500 40 08 800 900
vs-st183sp series www.vishay.com vishay semiconductors revision: 11-mar-14 2 document number: 94369 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 current carrying capability frequency units 50 hz 570 370 900 610 7040 5220 a 400 hz 560 360 940 630 3200 2280 1000 hz 500 300 925 610 1780 1200 2500 hz 340 190 760 490 880 560 recovery voltage v r 50 50 50 v voltage before turn-on v d v drm v drm v drm rise of on-state current di/dt 50 - - a/s case temperature 608560856085c equivalent values for rc circuit 47/0.22 47/0.22 47/0.22 ? /f on-state conduction parameter symbol test conditions values units maximum average on-state current ? at case temperature i t(av) 180 conduction, half sine wave 195 a 85 c maximum rms on-state current i t(rms) dc at 74 c case temperature 306 a maximum peak, one half cycle, ? non-repetitive surge current i tsm t = 10 ms no voltage reapplied sinusoidal half wave, ? initial t j = t j maximum 4900 t = 8.3 ms 5130 t = 10 ms 100 % v rrm ? reapplied 4120 t = 8.3 ms 4310 maximum i 2 t for fusing i 2 t t = 10 ms no voltage reapplied 120 ka 2 s t = 8.3 ms 110 t = 10 ms 100 % v rrm ? reapplied 85 t = 8.3 ms 78 maximum i 2 ? t for fusing i 2 ? t t = 0.1 to 10 ms, no voltage reapplied 1200 ka 2 ? s maximum peak on -state voltage v tm i tm = 600 a, t j = t j maximum, t p = 10 ms sine wave pulse 1.80 v low level value of threshold voltage v t(to)1 (16.7 % x ? x i t(av) < i < ? x i t(av) ), t j = t j maximum 1.40 high level value of threshold voltage v t(to)2 (i > ? x i t(av) ), t j = t j maximum 1.45 low level value of forward slope resistance r t1 (16.7 % x ? x i t(av) < i < ? x i t(av) ), t j = t j maximum 0.67 m ? high level value of forward slope resistance r t2 (i > ? x i t(av) ), t j = t j maximum 0.58 maximum holding current i h t j = 25 c, i t > 30 a 600 ma typical latchi ng current i l t j = 25 c, v a = 12 v, r a = 6 ? , i g = 1 a 1000 180 el i tm 180 el i tm 100 s i tm
vs-st183sp series www.vishay.com vishay semiconductors revision: 11-mar-14 3 document number: 94369 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note ? the table above shows the increment of thermal resistance r thjc when devices operate at different conduction angles than dc switching parameter symbol test conditions values units maximum non-repeti tive rate of ? rise of turned-on current di/dt t j = t j maximum, v drm = rated v drm ? i tm = 2 x di/dt 1000 a/s typical delay time t d t j = 25 c, v dm = rated v drm , i tm = 50 a dc, t p = 1 s ? resistive load, gate pulse: 10 v, 5 ? source 1.1 s maximum turn-off time minimum t q t j = t j maximum, ? i tm = 300 a, commutating di/dt = 20 a/s ? v r = 50 v, t p = 500 s, dv/dt: 200 v/s 15 maximum 20 blocking parameter symbol test conditions values units maximum critical rate of rise of off-state voltage dv/dt t j = t j maximum, linear to 80 % v drm , ? higher value available on request 500 v/s maximum peak reverse and off-state leakage current i rrm , i drm t j = t j maximum, rated v drm /v rrm applied 40 ma triggering parameter symbol test conditions values units maximum peak gate power p gm t j = t j maximum, f = 50 hz, d% = 50 60 w maximum average gate power p g(av) 10 maximum peak positi ve gate current i gm t j = t j maximum, t p ? 5 ms 10 a maximum peak positive gate voltage + v gm 20 v maximum peak negative gate voltage - v gm 5 maximum dc gate currrent required to trigger i gt t j = t j maximum v a = 12 v, r a = 6 ? 200 ma maximum dc gate voltag e required to trigger v gt 3v maximum dc gate curr ent not to trigger i gd t j = t j maximum, rated v drm applied 20 ma maximum dc gate volt age not to trigger v gd 0.25 v thermal and mechanical specifications parameter symbol test conditions values units maximum junction operating temperature range t j -40 to 125 c maximum storage temperature range t stg -40 to 150 maximum thermal resistan ce, junction to case r thjc dc operation 0.105 k/w maximum thermal resistance, case to heatsink r thcs mounting surface, smooth, flat and greased 0.04 mounting torque, 10 % non-lubricated threads 31 (275) n m (lbf in) lubricated threads 24.5 (210) approximate weight 280 g case style see dime nsions - link at the end of datasheet to-209ab (to-93) ? r thjc conduction conduction angle sinusoidal conduction rectangular conduction test conditions units 180 0.016 0.012 t j = t j maximum k/w 120 0.019 0.020 90 0.025 0.027 60 0.036 0.037 30 0.060 0.060
vs-st183sp series www.vishay.com vishay semiconductors revision: 11-mar-14 4 document number: 94369 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - current ratings ch aracteristics fig. 2 - current ratings characteristics fig. 3 - on-state powe r loss characteristics fig. 4 - on-state powe r loss characteristics 0 maximum allowable case temperature (c) average on-state current (a) 40 80 120 160 80 90 100 110 120 130 20 60 100 140 180 200 st183s series r thjc (dc) = 0.105 k/w ? conduction angle 30 c 60 c 90 c 180 c 120 c 0 250 300 350 average on-state current (a) 50 150 100 200 maximum allowable case temperature (c) 70 80 90 100 110 120 130 st183s series r thjc (dc) = 0.105 k/w ? conduction period 30 60 90 120 180 dc average on-state current (a) maximum average on-state power loss (w) 0 50 100 150 200 250 300 350 0 100 120 140 160 180 200 20 60 40 80 rms limit 180 120 90 60 30 ? conduction angle st183s series t j = 125 c maximum allowable ambient temperature (c) maximum average on-state power loss (w) 0 50 100 150 200 250 300 350 25 125 50 100 75 r thsa = 0.08 k/w - r 0.1 k/w 0.16 k/w 0.2 k/w 0.3 k/w 0.4 k/w 0.8 k/w 1.2 k/w 0.5 k/w average on-state current (a) maximum average on-state power loss (w) 0 250 300 350 50 150 100 200 0 50 100 150 200 250 300 350 400 450 500 dc 180 120 90 60 30 rms limit st183s series t j = 125 c ? conduction period maximum average on-state power loss (w) 0.2 k/w r thsa = 0.8 k/w - r 0.3 k/w 0.4 k/w 0.5 k/w 0.8 k/w 1.2 k/w 25 50 75 100 125 maximum allowable ambient temperature (c) 0.1 k/w 0.16 k/w 0 50 100 150 200 250 300 350 400 450 500
vs-st183sp series www.vishay.com vishay semiconductors revision: 11-mar-14 5 document number: 94369 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - maximum non-re petitive surge current fig. 6 - maximum non-re petitive surge current fig. 7 - on-state volt age drop characteristics fig. 8 - thermal impedance z thjc characteristics fig. 9 - reverse recovered charge characteristics fig. 10 - reverse recovery current characteristics 2000 1 10 100 2500 3000 3500 4000 4500 number of equal amplitude half cycle current pulses (n) peak half sine wave on-state current (a) initial t j = 125 c at 60 hz 0.0083 s at 50 hz 0.0100 s st183s series at any rated load condition and with rated v rrm applied following surge 0.01 0.1 1 2000 2500 3000 3500 4000 5000 pulse train duration (s) peak half sine wave on-state current (a) 4500 initial t j = 125 c no voltage reapplied rated v rrm reapplied st183s series maximum non-repetitive surge current versus pulse train duration. control of conduction may not be maintained 100 1.0 1.5 2.0 2.5 3.0 3.5 4.0 1000 10 000 instantaneous on-state current (a) instantaneous on-state voltage (v) st183s series t j = 25 c t j = 125 c 0.01 0.01 0.1 1 10 0.001 0.1 1 square wave pulse duration (s) z thjc - transient thermal impedance (k/w) st183s series 0.001 steady state value r thjc = 0.105 k/w (dc operation) 0 20 0 406080100 50 100 150 200 250 st183s series t j = 125 c di/dt - rate of fall of on-state current (a/s) q rr - maximum reverse recovery charge (c) i tm = 500 a i tm = 300 a i tm = 200 a i tm = 100 a i tm = 50 a 0 20 40 60 80 100 120 i rr - maximum reverse recovery current (a) di/dt - rate of fall of on-state current (a/s) st183s series t j = 125 c 20 0 40 60 80 100 i tm = 500 a i tm = 100 a i tm = 50 a i tm = 200 a i tm = 300 a 140 160
vs-st183sp series www.vishay.com vishay semiconductors revision: 11-mar-14 6 document number: 94369 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 11 - frequency characteristics fig. 12 - frequency characteristics fig. 13 - frequency characteristics 10 100 1000 10 000 100 1000 10 000 pulse basewidth (s) peak on-state current (a) 400 3000 100 1000 1500 2500 5000 200 500 snubber circuit r s = 47 c s = 0.22 f v d = 80 % v drm 50 hz t p st183s series sinusoidal pulse t c = 60 c 10 100 1000 10 000 100 1000 10 000 pulse basewidth (s) peak on-state current (a) t p st183s series sinusoidal pulse t c = 85 c snubber circuit r s = 47 c s = 0.22 f v d = 80 % v drm 5000 3000 400 100 1000 1500 2500 200 500 50 hz 10 10 100 1000 10 000 100 1000 10 000 pulse basewidth (s) peak on-state current (a) st183s series trapezoidal pulse t c = 60 c di/dt = 50 a/s t p snubber circuit r s = 47 c s = 0.22 f v d = 80 % v drm 400 3000 100 1000 1500 2500 5000 200 500 50 hz 10 000 10 10 100 1000 10 000 100 1000 10 000 pulse basewidth (s) peak on-state current (a) 400 3000 1000 1500 2500 5000 200 500 10 000 st183s series trapezoidal pulse t c = 85 c di/dt = 50 a/s t p snubber circuit r s = 47 c s = 0.22 f v d = 80 % v drm 100 50 hz 10 10 100 1000 10 000 100 1000 10 000 pulse basewidth (s) peak on-state current (a) st183s series trapezoidal pulse t c = 60 c di/dt = 100 a/s t p snubber circuit r s = 47 c s = 0.22 f v d = 80 % v drm 400 3000 100 1000 1500 2500 5000 200 500 50 hz 10 000 10 10 100 1000 10 000 100 1000 10 000 pulse basewidth (s) peak on-state current (a) st183s series trapezoidal pulse t c = 85 c di/dt = 100 a/s t p snubber circuit r s = 47 c s = 0.22 f v d = 80 % v drm 400 3000 100 1000 1500 2500 5000 200 500 50 hz 10 000
vs-st183sp series www.vishay.com vishay semiconductors revision: 11-mar-14 7 document number: 94369 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 14 - maximum on-state energy power loss characteristics fig. 15 - gate characteristics pulse basewidth (s) peak on-state current (a) 10 100 1000 10 000 10 100 1000 10 000 100 000 20 joules per pulse 0.5 0.3 0.2 10 t p st183s series sinusoidal pulse 0.1 2 1 5 pulse basewidth (s) peak on-state current (a) 10 100 1000 10 000 10 100 1000 10 000 100 000 0.1 0.2 0.5 2 1 5 10 20 joules per pulse t p st183s series rectangular pulse di/dt = 50 a/s 0.3 0.1 1 10 100 0.001 instantaneous gate current (a) instantaneous gate voltage (v) 0.01 0.1 1 10 100 v gd i gd (1) (2) (3) (4) device: st183s series frequency limited by p g(av) (1) p gm = 10 w, t p = 20 ms (2) p gm = 20 w, t p = 10 ms (3) p gm = 40 w, t p = 5 ms (4) p gm = 60 w, t p = 3.3 ms t j = 40 c t j = 25 c t j = 125 c (a) (b) rectangular gate pulse a) recommended load line for rated di/dt: 20 v, 10 ; t r 1 s b) recommended load line for 30 % rated di/dt: 10 v, 10 t r 1 s
vs-st183sp series www.vishay.com vishay semiconductors revision: 11-mar-14 8 document number: 94369 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table links to related documents dimensions www.vishay.com/doc?95077 - thyristor 2 - essential part number 3 - 3 = fast turn-off 4 - s = compression bonding stud 5 - voltage code x 100 = v rrm (see voltage ratings table) 6 - p = stud base 3/4" 16unf-2a 7 - reapplied dv/dt code (for t q test condition) 8 -t q code 9 - 0 = eyelet terminals (gate and auxiliary cathode leads) 1 = fast-on terminals (gate and auxiliary cathode leads) dv/dt - t q combinations available dv/dt (v/s) 200 15 20 fl fk t q (s) 11 10 - none = standard production - p = lead (pb)-free note: for metric device m16 x 1.5 contact factory device code 5 1 3 2 4 6 7 8 9 10 11 st vs- 18 3 s 08 p f k 0 p 1 - vishay semiconductors product
document number: 95077 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 19-may-10 1 to-209ab (to-93) outline dimensions vishay semiconductors dimensions in millimeters (inches) fa s t-on terminal s white gate red s hrink red cathode red s ilicon rubber c. s . 0.51 mm 2 (0.0008 s .i.) ? 4.3 (0.17) 19 (0.75) max. ? 8.5 (0.33) gla ss metal s eal ? 28.5 (1.12) max. s w 32 c. s . 35 mm 2 (0.054 s .i.) flexible lead 3/4"-16unf-2a white s hrink amp. 280000-1 ref-250 238.5 10 (9.39 0.39) 35 (1.38) max. 21 (0.83) max. 28.5 (1.12) max. 16 (0.63) max. 75 (2.95) min. 213.5 10 (8.41 0.39) 23 min. 4 max. 0 to 15 38 max.
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